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ITO Rotating Target

ITO Rotating Target (Indium Tin Oxide Rotating Target) is a tubular sputtering target fabricated by powder metallurgy, isostatic pressing, high-density sintering and precision machining, with high-purity indium oxide (In₂O₃) and tin oxide (SnO₂) as core raw materials (typical molar ratio In₂O₃:SnO₂=90:10, customizable from 80:20 to 95:5). Designed with a hollow cylindrical structure, it is compatible with the rotating target system of magnetron sputtering equipment. Compared with traditional planar ITO targets, it has core advantages such as high target utilization rate, strong sputtering stability, excellent film uniformity and suitability for large-scale continuous production. As a key core consumable for preparing transparent conductive films, it is widely used in optoelectronic fields including liquid crystal displays (LCD), organic light-emitting diodes (OLED), touch panels (TP), thin-film solar cells, flexible electronics and smart glass.

Core Features

  1. Ultra-High Density and Excellent Optoelectronic Performance Adopting vacuum hot pressing (VHP) or spark plasma sintering (SPS) technology, the target density reaches ≥99.5%, with a relative theoretical density of over 99%. The room temperature resistivity of the target is ≤2.0×10⁻⁴ Ω·cm. The sputtered ITO film has a visible light transmittance (550nm) ≥85% and a sheet resistance as low as ≤10 Ω/□, with an optoelectronic performance uniformity deviation ≤±3%, meeting the stringent requirements of high-end optoelectronic display devices.
  2. High Target Utilization Rate and Long Service Life The rotating working mode ensures uniform ion bombardment on the target surface, completely solving the "groove effect" of planar targets. The target utilization rate is greatly increased from 20%~30% of planar targets to 70%~80%, and the effective sputtering area of a single target can reach 3~4 times that of a planar target. Combined with seamless tube forming technology, the wall thickness uniformity deviation of the target is ≤±0.08mm, without cracks or pores, and the service life is 2~3 times longer than that of ordinary planar targets.
  3. Outstanding Sputtering Stability and Film Uniformity The target composition uniformity deviation is ≤±0.5%, with uniform micro grain size (5~15μm), no composition segregation or grain boundary defects. The sputtering process features low arc rate and stable discharge, enabling 7×24 hours of continuous sputtering. The ITO film deposited on large-area substrates (such as Gen 10.5 glass substrates) has a thickness uniformity deviation ≤±2% and a sheet resistance uniformity deviation ≤±4%, meeting the mass production requirements of large-size display panels.
  4. Full-Specification Customization and Process Compatibility Full-size customization is supported: outer diameter φ50~φ300mm, inner diameter φ30~φ280mm, length 500~4000mm, wall thickness 5~20mm. According to customer equipment requirements, target-backing tube integrated components can be prepared, with backing tube materials including oxygen-free copper (high thermal conductivity) and stainless steel (high strength). Special structural designs such as straight tube and conical shapes are supported, adapting to various process scenarios such as roll-to-roll (R2R) flexible sputtering and large-area planar sputtering.

Technical Parameters (Typical Values)

Item Standard ITO Rotating Target (90/10) High-Transparency ITO Rotating Target (95/5) Remarks
Composition Ratio (In₂O₃:SnO₂) 90:10 (molar ratio) 95:5 (molar ratio) Customizable full ratio range
Density ≥99.5% ≥99.3% Archimedes drainage method
Room Temperature Resistivity ≤2.0×10⁻⁴ Ω·cm ≤3.0×10⁻⁴ Ω·cm Four-probe method
Grain Size 5~15μm 3~10μm Metallographic microscope
Composition Uniformity Deviation ≤±0.5% ≤±0.3% X-ray Fluorescence (XRF)
Wall Thickness Uniformity Deviation ≤±0.08mm ≤±0.05mm Laser thickness gauge
Target Utilization Rate 70%~80% 65%~75% After optimized sputtering process
Film Visible Light Transmittance ≥85% (550nm, 150nm thick) ≥90% (550nm, 150nm thick) Spectrophotometer
Film Sheet Resistance ≤10 Ω/□ (150nm thick) ≤15 Ω/□ (150nm thick) Four-probe method
Common Specification (OD×Length) φ152×3000mm φ100×2000mm Customizable

Application Fields

  1. Flat Panel Display Field Used for sputtering of transparent electrode layers, pixel definition layers and touch layers of LCD, OLED, Mini/Micro LED display panels. High uniformity ensures the brightness consistency of display panels, and low resistance characteristics meet the requirements of high refresh rate and high resolution displays, adapting to the large-scale production of large-size glass substrates.
  2. Touch Panels and Flexible Electronics As the core target for ITO conductive layers of capacitive touch panels, it supports roll-to-roll (R2R) sputtering process and can prepare bending-resistant and high-flexibility ITO films on flexible PET and PI substrates, suitable for flexible touch devices such as smartphones, tablets and wearable devices.
  3. Thin-Film Solar Cells Used as transparent conductive top electrodes for thin-film solar cells such as amorphous silicon, cadmium telluride and perovskite. High-transparency ITO Rotating Targets can improve the light absorption efficiency of cells, and low-resistance characteristics ensure charge transport efficiency, helping to improve the conversion efficiency of photovoltaic cells.
  4. Other Optoelectronic Fields Used for electrochromic layers of smart glass, transparent window layers of infrared detectors, conductive layers of electromagnetic shielding films, etc. By adjusting the In₂O₃/SnO₂ ratio, the optoelectronic properties of the film can be precisely controlled to meet the functional requirements of different optoelectronic devices.

Preparation Process

  1. Raw Material Purification and Mixing: Select 4N (99.99%) high-purity indium oxide powder and 5N (99.999%) high-purity tin oxide powder, weigh them accurately according to the designed ratio, add dispersant and wet-mill in a planetary ball mill for 24~48 hours to ensure uniform mixing of raw materials with particle size distribution D50≤1μm.
  2. Isostatic Pressing: Fill the mixed powder into a rubber mold and form it by cold isostatic pressing (CIP) at a pressure of 200~300MPa to obtain a tubular green body, initially controlling the inner diameter, outer diameter and length dimensions.
  3. High-Density Sintering: Place the green body in a vacuum sintering furnace and adopt vacuum hot pressing (temperature 1400~1600℃, pressure 20~50MPa) or SPS process to achieve densification sintering of the green body with a density ≥99.5%.
  4. Precision Machining and Component Assembly: Perform diamond turning and grinding on the sintered tubular target to control wall thickness uniformity and surface roughness (Ra≤0.8μm); weld or bond with oxygen-free copper backing tube according to requirements to prepare target-backing tube integrated components, ensuring good thermal conductivity.
  5. Quality Inspection and Packaging: Detect composition by XRF, resistivity by four-probe method, and grain structure by metallographic microscope. After all indicators are qualified, vacuum-seal and package in a clean environment to prevent oxidation and contamination.

Usage and Storage Recommendations

  1. Usage Notes
    • Pre-sputtering cleaning is required before sputtering to remove the oxide layer and contaminants on the target surface. The pre-sputtering time is ≥30 minutes, and the vacuum degree is ≥5×10⁻⁴Pa.
    • Adopt DC magnetron sputtering mode with a recommended power density of 2~5W/cm². An efficient cooling system must be turned on to control the target surface temperature ≤150℃ and avoid thermal deformation of the target.
    • Avoid collision and scratching of the target surface during handling and installation to prevent particle contamination during sputtering.
  2. Storage Conditions Vacuum-sealed and stored in a dry and clean environment, with storage temperature 5~30℃ and relative humidity ≤40%, avoiding moisture, oxygen contact and severe collision. The shelf life is 12 months in an unopened state.
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