Silicon Planar Target

Core Features

1. Ultra-High Purity and Precise Impurity Control

   Raw materials can be 5N-7N (99.999%-99.99999%) grade ultra-high purity silicon. Semiconductor-grade monocrystalline silicon targets are prepared by the Float Zone (FZ) method, with total metallic impurity (Fe, Cu, Ni, Na, etc.) content ≤5 ppb and carbon/oxygen impurity content ≤10 ppb; industrial/optical-grade polycrystalline silicon targets have total impurity content ≤50 ppb. Customized doping with boron (B), phosphorus (P), arsenic (As) etc. is supported, with precisely controllable doping concentration (10¹⁵-10²⁰ atoms/cm³), meeting the requirements of different functional films such as conductive and semi-insulating types.
2. High Density and Excellent Sputtering Stability

   Advanced densification processes such as Hot Pressing (HP), Hot Isostatic Pressing (HIP) or Spark Plasma Sintering (SPS) are adopted, resulting in a target density of 99.5%-99.9% and porosity ≤0.5%, effectively reducing particle contamination and arcing during sputtering. The target surface is treated by Chemical Mechanical Polishing (CMP), with surface roughness Ra≤0.005 μm and flatness ≤0.003 mm, ensuring a sputtered film thickness deviation ＜±2% and consistent batch production.
3. Flexible Specifications and Strong Equipment Compatibility

   Customizable regular specifications such as circular, rectangular and square, as well as special-shaped structure processing are available. Common circular target diameters range from φ50 to φ300 mm, maximum rectangular target size is 1000×500 mm, and thickness is 5-20 mm, with dimensional tolerance controllable within ±0.01 mm. Backing target bonding with oxygen-free copper, molybdenum, titanium and other materials is supported via brazing or diffusion bonding processes, with a bonding strength ≥30 MPa, effectively improving the heat dissipation performance and mechanical strength of the target, and compatible with different types of sputtering cathode systems.
4. Mature Process and Cost-Effective Advantages

   The preparation process is standardized with a short processing cycle. The procurement and maintenance costs of small-to-medium size targets are significantly lower than those of rotating targets. No complex fixtures are required for installation, enabling rapid target replacement and sputtering process switching. It is particularly suitable for laboratory R&D, multi-variety small-batch production and process verification of new film systems, effectively shortening the R&D cycle and reducing production costs.

Technical Parameters (Typical Values)

Application Fields

1. Semiconductor Manufacturing

   Used to prepare core film layers of semiconductor devices, such as polycrystalline silicon gate electrodes, SiO₂ gate dielectric layers, Si₃N₄ passivation layers and isolation layers for CMOS devices, compatible with processes of 28 nm and above, ensuring the electrical performance and long-term reliability of devices.
2. Optical Coating

   As a key target for optical thin films, it is used to prepare anti-reflection films, high-reflection films and beam-splitting film systems for lenses, mirrors and filters. Utilizing its high purity and low impurity characteristics, it ensures that key indicators such as transmittance and refractive index of optical components meet design requirements.
3. Display and Photovoltaics

   In the display panel field, it is used to deposit passivation layers, buffer layers and doping layers of transparent conductive films for TFT-LCD and OLED panels; in the photovoltaic field, it can prepare surface passivation films and anti-reflection films for solar cells, improving the photoelectric conversion efficiency and service life of cells.
4. Laboratory R&D and Small-Batch Production

   Compatible with various laboratory-grade sputtering equipment, it supports R&D verification of new thin film materials, film system structures and sputtering processes, and can also meet the production needs of small-batch products such as high-precision optical components and small semiconductor devices.

Preparation Process

1. Raw Material Preparation

   Monocrystalline silicon target raw materials are prepared by the Float Zone (FZ) method to remove impurities and oxygen defects, obtaining ultra-high purity monocrystalline silicon ingots; polycrystalline silicon target raw materials are purified by the Siemens process or metallurgical method to obtain high-purity polycrystalline silicon powder.
2. Forming and Densification

   Silicon ingots are cut into blanks, or polycrystalline silicon powder is formed by cold isostatic pressing, followed by densification of the blanks through hot pressing, hot isostatic pressing or spark plasma sintering processes to ensure a density ≥99.5%.
3. Ultra-Precision Machining

   The densified blanks are subjected to cutting, grinding and polishing processes to control the dimensional tolerance, flatness and surface roughness of the target to meet sputtering requirements.
4. Backing Target Bonding (Optional)

   High-temperature brazing or diffusion bonding technology is used to composite and bond the silicon target with oxygen-free copper, molybdenum and other backing targets to improve heat dissipation performance, followed by ultrasonic flaw detection to ensure bonding strength and no defects.
5. Quality Inspection and Packaging

   Impurity content is detected by ICP-MS, bonding quality by ultrasonic flaw detection, and dimensional accuracy by laser thickness gauge. All qualified products are vacuum-packaged to prevent contamination during transportation and storage.

Usage and Storage Recommendations

1. Pre-Treatment

   Before sputtering, the target should be vacuum-baked at 200-300℃ for 2-4 hours to remove surface-adsorbed moisture, organics and impurities; target surface cleaning is recommended with anhydrous ethanol or isopropanol ultrasonic cleaning, avoiding chlorine-containing solvents to prevent target contamination.
2. Sputtering Parameters

   A vacuum degree ≥5×10⁻⁴ Pa is recommended, with high-purity argon (purity ≥99.999%) or argon-oxygen/argon-nitrogen mixed gas as the working gas, sputtering power density of 2-5 W/cm², and cooling water temperature controlled at 20-30℃ to avoid target deformation or cracking due to excessive temperature rise.
3. Storage Conditions

   Seal and store in a clean, dry vacuum package, with storage environment temperature controlled at 5-30℃ and relative humidity ≤40%. Avoid exposure to humid, dusty or corrosive gas environments to prevent surface oxidation or contamination of the target. The shelf life is 12 months under vacuum packaging.
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